1.
Naik, J. C.; Pinjare, S. L.; Pooja, P. M.
Design and simulation of underwater acoustic sensor materials Proceedings
American Institute of Physics, vol. 2965, 2024, ISBN: 0094243X (ISSN), (0).
@proceedings{10,
title = {Design and simulation of underwater acoustic sensor materials},
author = {J. C. Naik and S. L. Pinjare and P. M. Pooja},
doi = {10.1063/5.0212194},
isbn = {0094243X (ISSN)},
year = {2024},
date = {2024-01-01},
journal = {AIP Conference Proceedings},
volume = {2965},
pages = {020003+},
publisher = {American Institute of Physics},
abstract = {The Underwater communication is very important field in communication in present time. The sensor and acoustic devices used underwater is mostly corroded by the solvents in the water. The underwater parameters like pressure was applied to the design and the six different piezoresistive materials with four different diaphragm material that have been designed and tabulated with the comparison of different materials. In this paper, pressure is considered to be most important part to track and apply on different material that will give us stress, displacement and change in resistivity. The following Stress, Displacement and Resistivity is applied for the design and the results shows the best material that can be used for the design of any underwater sensors and devices. The maximum resistivity is obtained in PZT, SiC and PDMS with several hundred ohms/m change in resistivity. The maximum resistivity obtained for diaphragm materials are PMMA and Silicon Nitride Si3N4. The optimal change in resistivity and displacement was obtained for PZT as piezoresistive material and PMMA as diaphragm material as 2.976E3 ohm/m and several 17μm to 20μm. The novelty of the paper is that it focuses on detection of the direction of the acoustic signal for the underwater applications. The underwater communication devices can have best material for long life and the financial burden will be reduced for the underwater research. © 2024 Author(s).},
note = {0},
keywords = {ECE},
pubstate = {published},
tppubtype = {proceedings}
}
The Underwater communication is very important field in communication in present time. The sensor and acoustic devices used underwater is mostly corroded by the solvents in the water. The underwater parameters like pressure was applied to the design and the six different piezoresistive materials with four different diaphragm material that have been designed and tabulated with the comparison of different materials. In this paper, pressure is considered to be most important part to track and apply on different material that will give us stress, displacement and change in resistivity. The following Stress, Displacement and Resistivity is applied for the design and the results shows the best material that can be used for the design of any underwater sensors and devices. The maximum resistivity is obtained in PZT, SiC and PDMS with several hundred ohms/m change in resistivity. The maximum resistivity obtained for diaphragm materials are PMMA and Silicon Nitride Si3N4. The optimal change in resistivity and displacement was obtained for PZT as piezoresistive material and PMMA as diaphragm material as 2.976E3 ohm/m and several 17μm to 20μm. The novelty of the paper is that it focuses on detection of the direction of the acoustic signal for the underwater applications. The underwater communication devices can have best material for long life and the financial burden will be reduced for the underwater research. © 2024 Author(s).
2.
Rakesh, S.; Chaithra, S.
Implementation of Local & Remote Controlled Robotic Arm Proceedings
Grenze Scientific Society, vol. 2, 2024, ISBN: 979-833130057-9 (ISBN), (0).
@proceedings{13,
title = {Implementation of Local & Remote Controlled Robotic Arm},
author = {S. Rakesh and S. Chaithra},
isbn = {979-833130057-9 (ISBN)},
year = {2024},
date = {2024-01-01},
journal = {15th International Conference on Advances in Computing, Control, and Telecommunication Technologies, ACT 2024},
volume = {2},
pages = {6119-6126,},
publisher = {Grenze Scientific Society},
abstract = {This paper's primary aim is to design and create a robotic arm system for lifting.The main objective of this project is to design and construct a lifting mechanism for a robotic arm.The advancement of robotic technology has seen significant improvements in the versatility and precision of robotic arms, making them essential tools in various industries such as manufacturing, healthcare, and space exploration.This paper presents the design and implementation of a robotic arm that can be controlled both locally and remotely, offering enhanced flexibility and operational efficiency.The robotic arm is designed to perform a range of tasks including object manipulation, assembly operations, and precise movements required in sensitive environments.The local control mechanism employs direct user interaction through a control panel or joystick, allowing real-time adjustments and immediate response.Remote control capabilities are integrated using Internet of Things (IoT) technologies, enabling operation from distant locations via a web interface or mobile application.This dual-mode control system ensures that the robotic arm can be operated effectively in various scenarios, providing both convenience and reliability.Testing and validation of the robotic arm demonstrate its capability to perform complex tasks with high accuracy and responsiveness under both local and remote control.The system's modular design allows for easy upgrades and customization, making it adaptable to specific user requirements.The Arduino IDE is an open-source computer hardware and software platform that drives servo motors, which in turn control the robotic arm's position.Utilizing wireless command through a Bluetooth module, a smartphone running the Android operating system is also utilized for wireless control.The robotic arm can successfully complete the lifting task, according to the results of its testing and performance validation.In conclusion, the developed robotic arm showcases the potential for integrating local and remote control mechanisms to enhance operational flexibility.This implementation can serve as a prototype for future developments in robotic technology, pushing the boundaries of automation and remote operations. © Grenze Scientific Society, 2024.},
note = {0},
keywords = {ECE},
pubstate = {published},
tppubtype = {proceedings}
}
This paper's primary aim is to design and create a robotic arm system for lifting.The main objective of this project is to design and construct a lifting mechanism for a robotic arm.The advancement of robotic technology has seen significant improvements in the versatility and precision of robotic arms, making them essential tools in various industries such as manufacturing, healthcare, and space exploration.This paper presents the design and implementation of a robotic arm that can be controlled both locally and remotely, offering enhanced flexibility and operational efficiency.The robotic arm is designed to perform a range of tasks including object manipulation, assembly operations, and precise movements required in sensitive environments.The local control mechanism employs direct user interaction through a control panel or joystick, allowing real-time adjustments and immediate response.Remote control capabilities are integrated using Internet of Things (IoT) technologies, enabling operation from distant locations via a web interface or mobile application.This dual-mode control system ensures that the robotic arm can be operated effectively in various scenarios, providing both convenience and reliability.Testing and validation of the robotic arm demonstrate its capability to perform complex tasks with high accuracy and responsiveness under both local and remote control.The system's modular design allows for easy upgrades and customization, making it adaptable to specific user requirements.The Arduino IDE is an open-source computer hardware and software platform that drives servo motors, which in turn control the robotic arm's position.Utilizing wireless command through a Bluetooth module, a smartphone running the Android operating system is also utilized for wireless control.The robotic arm can successfully complete the lifting task, according to the results of its testing and performance validation.In conclusion, the developed robotic arm showcases the potential for integrating local and remote control mechanisms to enhance operational flexibility.This implementation can serve as a prototype for future developments in robotic technology, pushing the boundaries of automation and remote operations. © Grenze Scientific Society, 2024.
3.
Lakshmi, C. R.; Kavitha, D.; Kannadassan, D.; ShivaPanchakshari, T. G.
Slotted Ground Resonator Based Cauer LPF Proceedings
Institute of Electrical and Electronics Engineers Inc., 2024, ISBN: 979-835038328-7 (ISBN), (0).
@proceedings{33,
title = {Slotted Ground Resonator Based Cauer LPF},
author = {C. R. Lakshmi and D. Kavitha and D. Kannadassan and T. G. ShivaPanchakshari},
doi = {10.1109/ICWITE59797.2024.10502769},
isbn = {979-835038328-7 (ISBN)},
year = {2024},
date = {2024-01-01},
journal = {Proceedings of ICWITE 2024: IEEE International Conference for Women in Innovation, Technology and Entrepreneurship},
pages = {65-70,},
publisher = {Institute of Electrical and Electronics Engineers Inc.},
abstract = {The applicability of Slotted Ground Structure is well documented in various academic literature. One of the design considerations in microwave filter design is the systematic implementation based on empirical modelling. In this study, the implementation of slotted ground structures based on Dumbbell Cauer low-pass filters of different orders is carried out in a methodical manner. The research specification is successfully met by the implementation of empirical modelling techniques for the filter. The design specifications are in alignment with specification of the required filter specifications. © 2024 IEEE.},
note = {0},
keywords = {ECE},
pubstate = {published},
tppubtype = {proceedings}
}
The applicability of Slotted Ground Structure is well documented in various academic literature. One of the design considerations in microwave filter design is the systematic implementation based on empirical modelling. In this study, the implementation of slotted ground structures based on Dumbbell Cauer low-pass filters of different orders is carried out in a methodical manner. The research specification is successfully met by the implementation of empirical modelling techniques for the filter. The design specifications are in alignment with specification of the required filter specifications. © 2024 IEEE.
4.
Lakshmipathy, M.; Prasad, M. J. S.; Kodandaramaiah, G. N.
Advanced ambient air quality prediction through weighted feature selection and improved reptile search ensemble learning Journal Article
In: Knowledge and Information Systems, vol. 66, pp. 267-305,, 2024, ISBN: 02191377 (ISSN), (2).
@article{41,
title = {Advanced ambient air quality prediction through weighted feature selection and improved reptile search ensemble learning},
author = {M. Lakshmipathy and M. J. S. Prasad and G. N. Kodandaramaiah},
doi = {10.1007/s10115-023-01947-x},
isbn = {02191377 (ISSN)},
year = {2024},
date = {2024-01-01},
journal = {Knowledge and Information Systems},
volume = {66},
pages = {267-305,},
publisher = {Springer Science and Business Media Deutschland GmbH},
abstract = {Air pollution causes a pivotal impact throughout the world that affects natural resources. It also makes hazardous damage to the environment and defects in human health. The World Health Organization states that the report of air pollution is the major reason of human ailments such as lung cancer, early death, asthma, premature birth, and stroke. Due to the influence of changes in weather and climate caused by air pollution, global warming, acid rain, rainfall declines and depletion of the ozone layer occur. To mitigate these issues, preventive measures for air quality are prerequisites. Therefore, air quality monitoring is considered the main aspect of acquiring decision-making support that yields accurate predictions. In addition, there is a need of evaluating the quality of ambient (outdoor) air depending on the observations of pollutants. To achieve this, an automated air quality prediction model is proposed by using modified probability ratio-based RSA (MPR-RSA) and ensemble-based air quality prediction (EAQP). In the first step, the input data are undergone the preprocessing step. The preprocessing is done through various methods such as data imputation, data cleansing, and data transformation. Then, the preprocessed data are given to extract the significant features. The extracted features are obtained by statistical features, spatial features, and temporal features. To enhance the predictive accuracy, the weighted feature selection is employed, where the weight parameter is optimized by the proposed MPR-RSA algorithm. Then, the classification process is accomplished by EAQP, where the hyper-parameters are optimized by the same MPR-RSA algorithm. Here, the ensemble model is constructed by a single Prediction approach as support vector regression, recurrent neural network, extreme learning, bi-directional long short-term memory, and multi-layer perceptron neural network. Finally, the performance is analyzed with various parameters to prove that the proposed model becomes an advanced air quality prediction. Throughout the analysis, the RMSE of the proposed model achieves 9.96%, which can be a lesser value than the other existing heuristic algorithms. Hence, the proposed prediction model attains the low value of RMSE and MAE, which offers early forecasts of ambient air pollution to evade the damage and impacts to the environment. © 2023, The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature.},
note = {2},
keywords = {ECE},
pubstate = {published},
tppubtype = {article}
}
Air pollution causes a pivotal impact throughout the world that affects natural resources. It also makes hazardous damage to the environment and defects in human health. The World Health Organization states that the report of air pollution is the major reason of human ailments such as lung cancer, early death, asthma, premature birth, and stroke. Due to the influence of changes in weather and climate caused by air pollution, global warming, acid rain, rainfall declines and depletion of the ozone layer occur. To mitigate these issues, preventive measures for air quality are prerequisites. Therefore, air quality monitoring is considered the main aspect of acquiring decision-making support that yields accurate predictions. In addition, there is a need of evaluating the quality of ambient (outdoor) air depending on the observations of pollutants. To achieve this, an automated air quality prediction model is proposed by using modified probability ratio-based RSA (MPR-RSA) and ensemble-based air quality prediction (EAQP). In the first step, the input data are undergone the preprocessing step. The preprocessing is done through various methods such as data imputation, data cleansing, and data transformation. Then, the preprocessed data are given to extract the significant features. The extracted features are obtained by statistical features, spatial features, and temporal features. To enhance the predictive accuracy, the weighted feature selection is employed, where the weight parameter is optimized by the proposed MPR-RSA algorithm. Then, the classification process is accomplished by EAQP, where the hyper-parameters are optimized by the same MPR-RSA algorithm. Here, the ensemble model is constructed by a single Prediction approach as support vector regression, recurrent neural network, extreme learning, bi-directional long short-term memory, and multi-layer perceptron neural network. Finally, the performance is analyzed with various parameters to prove that the proposed model becomes an advanced air quality prediction. Throughout the analysis, the RMSE of the proposed model achieves 9.96%, which can be a lesser value than the other existing heuristic algorithms. Hence, the proposed prediction model attains the low value of RMSE and MAE, which offers early forecasts of ambient air pollution to evade the damage and impacts to the environment. © 2023, The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature.
5.
Vimala, P.; Usha, C.
Impact of material in gate engineering of various TFET architectures Book Chapter
In: pp. 333-351,, Springer Nature, 2024, ISBN: 978-981996649-3 (ISBN); 978-981996648-6 (ISBN), (0).
@inbook{44,
title = {Impact of material in gate engineering of various TFET architectures},
author = {P. Vimala and C. Usha},
doi = {10.1007/978-981-99-6649-3_25},
isbn = {978-981996649-3 (ISBN); 978-981996648-6 (ISBN)},
year = {2024},
date = {2024-01-01},
journal = {Handbook of Emerging Materials for Semiconductor Industry},
pages = {333-351,},
publisher = {Springer Nature},
abstract = {Following Moore's law, semiconductor mainstream electronics (processors, memories, etc.) enjoyed a very dynamic evolution over decades. Key to this success was the continuous scaling of the silicon metal-oxide-semiconductor field-effect transistor (Si MOSFET). In 2020, Si MOSFETs with 20-nm gates is in mass production, currently we are in 7-nm gate, and the International Technology Roadmap for Semiconductors (ITRS) predicts 3-nm technology in future. As the MOSFETs are scaled down to nanometer scales, the prime area of concern becomes the drive current deterioration. This is because of the very high vertical and horizontal electrical fields which reduce the carrier mobility and hence the drive current in scaled devices. Field Effect Transistor is the backbone of semiconductor electronics. It represents the basic building block of systems of modern information and communication technology, and progress in the important field critically depends on rapid improvements of FET performance. An efficient option to achieve the goal is the introduction of novel channel materials into FET technology. In the last decade, the Tunnel Field Effect Transistors (TFETs) have received a significant attention in the semiconductor community, as a promising candidate for future low power high-speed applications. The ambipolar behavior and low ON-state current are the major disadvantages of TFETs, and it can be overcome by introducing gate engineering in various TFET models. The book chapter focused on the various devices to improve the drain current and to reduce the ambipolar behavior such as double material double gate (DMDG) TFET, triple material double gate (TMDG) TFET, double material triple gate (DMTG) TFET, triple material triple gate (TMTG) TFET, double material gate-all-around (DMGAA) TFET, and triple material gate-all-around (TMGAA) TFET. © Springer Nature Singapore Pte Ltd. 2024. All rights reserved.},
note = {0},
keywords = {ECE},
pubstate = {published},
tppubtype = {inbook}
}
Following Moore's law, semiconductor mainstream electronics (processors, memories, etc.) enjoyed a very dynamic evolution over decades. Key to this success was the continuous scaling of the silicon metal-oxide-semiconductor field-effect transistor (Si MOSFET). In 2020, Si MOSFETs with 20-nm gates is in mass production, currently we are in 7-nm gate, and the International Technology Roadmap for Semiconductors (ITRS) predicts 3-nm technology in future. As the MOSFETs are scaled down to nanometer scales, the prime area of concern becomes the drive current deterioration. This is because of the very high vertical and horizontal electrical fields which reduce the carrier mobility and hence the drive current in scaled devices. Field Effect Transistor is the backbone of semiconductor electronics. It represents the basic building block of systems of modern information and communication technology, and progress in the important field critically depends on rapid improvements of FET performance. An efficient option to achieve the goal is the introduction of novel channel materials into FET technology. In the last decade, the Tunnel Field Effect Transistors (TFETs) have received a significant attention in the semiconductor community, as a promising candidate for future low power high-speed applications. The ambipolar behavior and low ON-state current are the major disadvantages of TFETs, and it can be overcome by introducing gate engineering in various TFET models. The book chapter focused on the various devices to improve the drain current and to reduce the ambipolar behavior such as double material double gate (DMDG) TFET, triple material double gate (TMDG) TFET, double material triple gate (DMTG) TFET, triple material triple gate (TMTG) TFET, double material gate-all-around (DMGAA) TFET, and triple material gate-all-around (TMGAA) TFET. © Springer Nature Singapore Pte Ltd. 2024. All rights reserved.
6.
Usha, C.; Vimala, P.
Evolution of Heterojunction Tunnel Field Effect Transistor and its Advantages Book Chapter
In: pp. 99-123,, CRC Press, 2023, ISBN: 978-100087780-9 (ISBN); 978-103234876-6 (ISBN), (0).
@inbook{12,
title = {Evolution of Heterojunction Tunnel Field Effect Transistor and its Advantages},
author = {C. Usha and P. Vimala},
doi = {10.1201/9781003327035-6},
isbn = {978-100087780-9 (ISBN); 978-103234876-6 (ISBN)},
year = {2023},
date = {2023-01-01},
journal = {Tunneling Field Effect Transistors: Design, Modeling and Applications},
pages = {99-123,},
publisher = {CRC Press},
abstract = {In 1963, Complementary Metal Oxide Semiconductor technology was introduced by Frank Wanlass. CMOS technology is an organization of two types of MOSFET such as P-type and N-type. CMOS technology has dominated the silicon industry due to various advantages. Initially in this chapter, we introduce the limitations of downscaling MOSFET devices which gave rise to short channel effects: Drain Induced Barrier Lowering, threshold roll-off, high leakage current and limits the subthreshold voltage to 60mV/dec. In order to overcome the disadvantages of conventional MOSFET device, a promising device Tunnel Field Effect Transistor was reported. The chapter is continued with the basic structure of the homojunction Double Gate (DG)TFET device. The DGTFET has shown less ON-state performance. Thus, to improve the ON-state performance of the TFET device multigate TFET devices, Gate All Around TFET and gate engineering is reported. Further, we move on to the different materials used for the formation of heterojunction TFET. Heterojunction TFET devices exhibit high forward gain and low reverse gain compared to the homojunction TFETs. And also, band-gap alignment is flexible based on the applications. The combination of silicon with other semiconductors for the formation of heterojunction provides a higher tuning of band-gap than silicon material technology. HeteroJunction Multigate TFET devices such as Double Gate(DG) HJTFET and Gate All Around HJTFET. The operation of the DG HJTFET and the advantages of the device will be discussed. The gate control of the HJTFET device is increased by a cylindrical gate that covers the substrate in all directions. Due to the increase in gate control, the tunneling of electrons increases which further increases the drain current performance. The device structure and operation of the GateAll-Around HJTFET will be discussed in detail. The chapter is further continued with the gate engineering HJTFET devices. Gate engineering is the usage of more than one material across the gate terminal which improves the performance of the device. The gate engineering is used for the Multigate and Gate-All-Around HJTFET devices. The gate engineering HJTFET devices include Double Material Double Gate(DMDG)HJTFET, Triple Material Double Gate (TMDG) HJTFET, Double Material Surrounding Gate(DMSG) HJTFET, and Triple Material Surrounding Gate (TMSG) HJTFET are explained along with device structure and its advantages. Thus, this chapter intends to study the device structure, multigate, gate engineering, electrostatic characteristics, and applications of heterojunction TFET devices. © 2023 selection and editorial matter, T.S. Arun Samuel, Young Suh Song, Shubham Tayal, P. Vimala, and Shiromani Balmukund Rahi; individual chapters, the contributors.},
note = {0},
keywords = {ECE},
pubstate = {published},
tppubtype = {inbook}
}
In 1963, Complementary Metal Oxide Semiconductor technology was introduced by Frank Wanlass. CMOS technology is an organization of two types of MOSFET such as P-type and N-type. CMOS technology has dominated the silicon industry due to various advantages. Initially in this chapter, we introduce the limitations of downscaling MOSFET devices which gave rise to short channel effects: Drain Induced Barrier Lowering, threshold roll-off, high leakage current and limits the subthreshold voltage to 60mV/dec. In order to overcome the disadvantages of conventional MOSFET device, a promising device Tunnel Field Effect Transistor was reported. The chapter is continued with the basic structure of the homojunction Double Gate (DG)TFET device. The DGTFET has shown less ON-state performance. Thus, to improve the ON-state performance of the TFET device multigate TFET devices, Gate All Around TFET and gate engineering is reported. Further, we move on to the different materials used for the formation of heterojunction TFET. Heterojunction TFET devices exhibit high forward gain and low reverse gain compared to the homojunction TFETs. And also, band-gap alignment is flexible based on the applications. The combination of silicon with other semiconductors for the formation of heterojunction provides a higher tuning of band-gap than silicon material technology. HeteroJunction Multigate TFET devices such as Double Gate(DG) HJTFET and Gate All Around HJTFET. The operation of the DG HJTFET and the advantages of the device will be discussed. The gate control of the HJTFET device is increased by a cylindrical gate that covers the substrate in all directions. Due to the increase in gate control, the tunneling of electrons increases which further increases the drain current performance. The device structure and operation of the GateAll-Around HJTFET will be discussed in detail. The chapter is further continued with the gate engineering HJTFET devices. Gate engineering is the usage of more than one material across the gate terminal which improves the performance of the device. The gate engineering is used for the Multigate and Gate-All-Around HJTFET devices. The gate engineering HJTFET devices include Double Material Double Gate(DMDG)HJTFET, Triple Material Double Gate (TMDG) HJTFET, Double Material Surrounding Gate(DMSG) HJTFET, and Triple Material Surrounding Gate (TMSG) HJTFET are explained along with device structure and its advantages. Thus, this chapter intends to study the device structure, multigate, gate engineering, electrostatic characteristics, and applications of heterojunction TFET devices. © 2023 selection and editorial matter, T.S. Arun Samuel, Young Suh Song, Shubham Tayal, P. Vimala, and Shiromani Balmukund Rahi; individual chapters, the contributors.